&control
   prefix = 'silicon'
   calculation = 'scf'
   restart_mode = 'from_scratch'
   wf_collect = .false.
   tstress = .true.
   tprnfor = .true.
   outdir = '.'
   wfcdir = '.'
   pseudo_dir = '../pseudo/ld1'
/
&system
   ibrav = 0
   a = 5.43
   nat = 2
   ntyp = 1
   nbnd = 4
   ecutwfc = 25.0
/
&electrons
   electron_maxstep = 100
   conv_thr = 1.0d-10
   mixing_mode = 'plain'
   mixing_beta = 0.7
   mixing_ndim = 8
   diagonalization = 'david'
   diago_david_ndim = 4
   diago_full_acc = .true.
/
CELL_PARAMETERS alat
       0.000000000   0.500000000   0.500000000
       0.500000000   0.000000000   0.500000000
       0.500000000   0.500000000   0.000000000
ATOMIC_SPECIES
  Si  28.086  Si.UPF
ATOMIC_POSITIONS crystal
  Si  -0.125000000  -0.125000000  -0.125000000
  Si   0.125000000   0.125000000   0.125000000
K_POINTS automatic
4 4 4 1 1 1
